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njm2590/97 -1- v er.2004-08-25 455khz input fm if demodulator general description package outline the njm2590 and NJM2597 are low current fm if demodulator ics with 455khz if input, which operate from 1.6v supply. the njm2590/97 contain the minimum functions required to fm if demodulator, that is, if amplifier, quadrature detector, lpf amplifier, fsk comparator, rssi, and rssi comparator. it offers unmatched design flexibility. features low operating voltage 1.6v to 5.5v low operating current 550ua at v + =1.8v if input frequency 455khz (standard) rssi comparator the range of linear area on rssi output versus if input characteristics njn2590 if input level=25 to 60 dbuvemf (reference value) NJM2597 if input level=35 to 85 dbuvemf (reference value) bipolar technology package outline ssop14 block diagram njm2590v/97v v + if in 14 13 12 11 10 9 8 1 2 4 3 5 6 7 quad det rssi fsk out charge gnd dec fsk ref quad in af out lpf in lpf out lpf rssi out rssi comp sense level carrier sense charge if amp fsk comp
njm2590/97 ver.2004-08-25 - 2 - absolute maximum ratings (ta=25c) parameter symbol ratings unit supply voltage v + 8.0 v power dissipation p d 300 mw operating temperature t o p r - 40 to +85 c storage temperature t s t g - 40 to +125 c recommended operational condition (ta=25c) parameter symbol test conditions min. typ. max. unit supply voltage v + 1.6 1.8 5.5 v electrical characteristics ( ta=25c, v + =1.8v, fin=455khz, fmod=600hz, fdev=4khz) parameter symbol test conditions min. typ. max. unit current consumption i c c q no signal 440 550 660 ua if amplifier input resistance r i n (1.6) 2 (2.4) k ? signal to noise ratio 1 s / n 1 vi=60dbu emf - 60 - db signal to noise ratio 2 s / n 2 vi=25dbu emf - 30 - db - 3db limiting sensitivity v i n ( l i m ) - 22 27 dbu emf demodulated output level v o d vi=60dbu emf 35 40 65 mvrms am rejection raito a m r vi=60dbu emf am=30% - 50 - db duty ratio of wave shaped output d r vi=60dbu emf 40 50 60 % quick charge/discharge current i c h v fsk out =gnd v lpf out = 0.18v 35 65 110 ua njm2590 vi=40dbu emf 0.7 0.9 1.1 rssi output voltage NJM2597 v r s s i vi=80dbu emf 0.8 1.1 1.4 v high level leak current of fsk out terminal i f s k h v fsk out =v + (-0.1) (0) (0.1) ua low level voltage of fsk out terminal v f s k l i fsk out =100ua - 0.1 0.4 v high level leak current of carrier sense terminal i c r y h v carriar sense =v + (-0.1) (0) (0.1) ua low level voltage of carrier sense terminal v c r y l i carrier sense =100ua 0.0 0.1 0.4 v bias current of sense level terminal i l e v e l v carrier sense =0.8v (-1.0) (0) (1.0) ua the value shown in parenthesis are reference values.
njm2590/97 v er.2004-08-25 - 3 - test circuit this test circuit allows the measurement of all parameters described in ?electrical characteristics?. this test circuit includes some electrical switches that should be in the suitable positions for the measurement of each parameter. for the best measurement of each parameter, the drawings of ?test circuit 1 to 10? are additionally prepared to show the switching positions and other changes of connection. note that ?test circuit 1 to 10? are not the complete circuit to measure. note : 1. ?cd? means a ceramic discriminator of 455khz ; cdbcb455kcay66-r0(murata,japan) a 1 2 3 4 5 6 7 a 8 9 10 11 12 13 14 rssi 51 0.1u 0.1u cd 10u 3.0k 68k 3300 p 68k 68k 560 p 0.18v 0.01u 100k 1000 p sense level 100k 10u rssi comp quad det v+ carrier sense rssi out fsk out v+ lpf 10u charge if amp fsk comp
njm2590/97 ver.2004-08-25 - 4 - test circuit 1 s/n1, s/n2, vin(lim), vod, amr test circuit 2 dr test circuit 3 iccq test circuit 4 vrssi test circuit 5 ich test circuit 6 vfskl 1 8 51 0.1u s/n1, s/n2, vin(lim), vod, a m r 1 10 51 0.1u v+ 100 k dr 2 14 a v+ iccq 1 11 51 0.1u 1000p 0.1u 4 vrssi v+ a 4 7 8 9 14 0.18 v 10u ich v+ v 100u a 10 vfskl
njm2590/97 v er.2004-08-25 - 5 - test circuit 9 vcryl test circuit 10 ilevel test circuit 8 icryh test circuit 7 ifskh v 100ua v+ 13 vcryl v 100k v+ 10 ifskh = v/100k 12 sense level 0.8v a ilevel v 100k v+ 13 icryh = v/100k
njm2590/97 ver.2004-08-25 - 6 - evaluation board for obtaining actual performance data, an evaluation board is available. note that this board is not prepared for the reference design of parts layout, pattern layout and so on. circuit diagram cd: ceramic discriminator, cdbcb455kcay66-r0 (murata manufacturing co., ltd.) circuit board v+ carrier sense sense level rssi out fsk out fsk ref if in gnd gnd lpf out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 rssi 0.1 0.1u cd 10u 3.0k 68k 3300 p 68k 68k 560 p 0.01u 100k 1000 p 100k 10u rssi comp quad v+ carrier sense rssi out fsk out v+ lpf 10u charge if amp fsk comp if in sw sense level lpf out fsk ref gnd
njm2590/97 v er.2004-08-25 -7- terminal function ( ta=25c, v + =1.8v ) pin no. symbol equivarent circuit voltage function 1 if in 1.75v if amplifier input. typical input impedance is 2k ? . built in esd protective circuit. 3 dec 1.75v if decoupling. connected with an external decoupling capacitor. built-in esd protective circuit 2 gnd -- ground. 4 fsk ref 0.9v fsk reference input. this is a reference input of wave shaping comparator. connected with an external capacitor. a quick charge/discharge circuit offers the voltage of pin 4 comes the same voltage of pin 8 quickly. built-in esd protective circuit. 5 quad in 0.5v quadrature detector input. connected with a ceramic discriminator. built-in esd protective circuit. 6 af out 0.2v fm demodulated signal output. built-in esd protective circuit. 3 1 v+ 5 v+ 6 v+ 4 v+
njm2590/97 ver.2004-08-25 - 8 - pin no. symbol equivarent circuit voltage function 7 lpf in 0.18v low pass filter input. this terminal is biased from the pin 6 through an external rc filter. built-in esd protective circuit. 8 lpf out 0.18v low pass filter output. built-in esd protective circuit. 9 charge - quick charge/discharge control. the power supply output voltage to pin 9 sets up the quick charge / discharge circuit. instead of the power supply, another power source can also be used within the limit of the rated supply voltage. built-in esd protective circuit between pin 9 and ground. 10 fsk out - fsk output. fsk comparator is a wave shaping circuit. a lpf output signal is inverted and wave-shaped. instead of the power supply, another power source can also be used within the limit of the rated supply voltage. built-in esd protective circuit between pin 10 and ground. 11 rssi out 50mv received signal strength indicator output. pin 11 outputs dc level proportional to the log of input signal level to pin 1. built-in esd protective circuit. 7 8 v+ 9 v+ 10 v+ 11 v+
njm2590/97 v er.2004-08-25 - 9 - pin no. symbol equivarent circuit voltage function 12 sense level - sense level input. built-in esd protective circuit. 13 carrier sense - carrier sense output. the result of rssi comparator is output by comparing rssi output level with an external input level to pin 12. built-in esd protective circuit between pin 13 and ground. 14 v+ - power supply. 12 v+ 13 v+ 14
njm2590/97 ver.2004-08-25 - 1 0 - description 1. fsk comparator (fsk comp) fsk comparator is a wave shaping circuit. when the demodulated fsk signal is weak or noisy, the computer may fail to read this signal. to prevent the read-error, the wave shaping circuit will change this weak or noisy signal to the correct signal. pin 10 usually pulls up to power supply output voltage through an external high-valued resistor. this external resistor can be connected to another power source within the limit of absolute maximum ratings. 2. quick charge/ discharge circuit the dc voltage of pin 4 is ordinarily equal to that of the demodulated fsk signal. when the initial state of power-up turns into a steady state, the voltage of pin 4 will be late to come up to the reference voltage by reason of time constant of an external capacitor and an internal resistor. at that time the wave shaped data may be failed to read correctly. the quick charge/discharge circuit serves a useful function to shorten the rise time when power is turned on. when power supply is hooked up to pin9 upon turning the power on, this circuit will charge/discharge the external capacitor quickly to prevent read-error. instead of the power supply, another power source can also be used within the limit of the rated supply voltage. during the high-speed charge/discharge circuit runs, dc level of fm demodulated signal may varies with frequency shift or others. even in such a case, the voltage of pin 4 follows the voltage of fm demodulated signal so that the duty ratio of wave shaped output can keep constant. 9 300k ? 4 v+ 80k ? 80k ? 2.7k ? 2k ? 300 ? + - 4 8 10 10uf 300k ? 300k ? 100k ? v+ + -
njm2590/97 v er.2004-08-25 -11- 3. carrier sense the result of comparator is output to pin13 by comparing the output voltage of pin11 with external reference voltage of pin 12. because pin13 is an open-collector terminal, an external resistor can be connected to another power supply within the limit of absolute maximum ratings. 4. rssi circuit (rssi) a dc voltage corresponding to the input level of pin1 is output to pin11. the internal resistance of pin11 is around 48 k ? . the rssi characteristics can be changed by adding an external resistor,. in such a case, note that the temperature characteristics of pin 11 may alter due to a disparity between the temperature coefficient of the external resistor and the internal resistor of pin 11. 5. low pass filter (lpf) this is a 3rd-order multiple feedback filter. the cut-off frequency fc is obtained by ; where ra=rb=rc or ca=cb=cc each of pin7(lpf in) and pin8(lpf out) has a built-in esd protective resistor 300 ? . 11 1000 pf rext v+ 500 ? 300 ? 48k ? 560pf 3300 pf 6 7 8 0.01 uf 300 ? ra rb rc ca cb cc 300 ? 68k ? 68k ? 68k ? + - ] [ 1 3 hz c c r arbrccac b fc = 2 11 13 12 1000pf sense level 100k ? v+ + -
njm2590/97 ver.2004-08-25 - 12 - application circuit the njm2590 itself works with the operational temperature from - 40 to +85c. however this matter is not meant to insure the reliability of this application circuit under the temperature from - 40 to +85c. ceramic discriminator (especially designed for njm2590/97) to optimize some important performance, the following ceramic discriminator is available. for more information on this cd and 450khz cd, please contact the cd supplier. cdbcb455kcay66-r0 (murata manufacturing co., ltd., japan) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 rssi 0.1 0.1u cd 10u 3.0k 68k 3300 p 68k 68k 560 p 0.01u 100k 1000 p 100k 10u rssi comp quad v+ carrier sense rssi out fsk out v+ lpf 10u charge if amp fsk comp if in
njm2590/97 v er.2004-08-25 -1 3 - typical characteristics s+n,amr versus supply voltage 0 10 20 30 40 50 60 70 0123456 supply voltage v+ (v) s+r, amr (db) amr (vi=60dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c) s+n demodulated output versus supply voltage 0 10 20 30 40 50 60 70 80 0123456 supply voltage v+ (v) demodulated output vod (mvrms) (vi=60dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c) operating current versus supply voltage 0 100 200 300 400 500 600 700 800 0123456 supply voltage v+ (v) operating current iccq (ma) (no signal,ta=25c) rssi output voltage versus supply volgate 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0123456 supply voltage v+ (v) rssi output voltage vrssi (v ) (vi=40dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c) -3db limiting sensitivity versus supply voltage 0 5 10 15 20 25 30 0123456 supply voltage v+ (v) -3db limiting sensitivit y vin(lim) (dbuemf) (fin=455khz, fmod=600hz, fdev=4khz,ta=25c) duty ratio of wave shaped output versus supply voltage 40 42 44 46 48 50 52 54 56 58 60 0123456 supply voltage v+ (v) duty ratio dr (% ) quick charge on quick charge off (vi=60dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c)
njm2590/97 ver.2004-08-25 - 14 - s+n, amr versus if input level -80 -70 -60 -50 -40 -30 -20 -10 0 10 -20 0 20 40 60 80 100 120 if input level vin(dbuemf) s+n, amr (db) n s+n amr : am=3 0% (vi=60dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c) s-curve characteristics 0 50 100 150 200 250 300 350 435 440 445 450 455 460 465 470 if input frequency fin (khz) af output voltage (mv) 60dbuvemf 25dbuvemf (vi=60dbuemf, fmod=600hz, fdev=4khz,ta=25c) if detuning characteristics -30 -25 -20 -15 -10 -5 0 5 -15 -10 -5 0 5 10 15 relative frequency to fin (khz) detuning (db) 60dbuvemf 25dbuvemf (vi=60dbuemf, fin=455khz, fmod=600hz, fdev=4khz,ta=25c) carrier sense output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 00.511.52 rssi output voltage vrssi (v) carrier sense output voltage vcry (v) (fin=455khz, fmod=600hz, fdev=4khz,sense level=0.8v,ta=25c) quick charge/discharge current versus fsk reference inputvoltage -80 -60 -40 -20 0 20 40 60 80 0 100 200 300 400 500 fsk reference input voltage (mv) quick charge/discharge current(ua) (no input signal,ta=25c) rssi output level versus if input level 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -20 0 20 40 60 80 100 120 if input level vi (dbuemf) rssi output voltage vrssi (v) (fin=455khz, fmod=600hz, fdev=4khz,ta=25c) njm2590 NJM2597
njm2590/97 v er.2004-08-25 -1 5 - operating current versus ambient temperature 0 100 200 300 400 500 600 700 800 900 1000 -40 -20 0 20 40 60 80 100 ambient temperature ta(c) operating current iccq(ma) (no input signal,v+=1.8v) -3db limiting sensitivity versus ambient temperature 0 5 10 15 20 25 30 35 40 -40 -20 0 20 40 60 80 100 ambient temperature ta(c) -3db limiting sensitivity vin(lim) (dbuemf) (fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v) s+n versus ambient temperature 0 10 20 30 40 50 60 70 80 -40-20 0 20406080100 ambient temperature ta (c) s+n s/n1,s/n2(db) s/n1: vi=60dbuemf s/n2: vi=25dbuemf (fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v) demodulated output level versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 -40-20 0 20406080100 ambient temperature ta (c) demodulated output level vod (mvrms) (vi=60dbuemf,fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v) am rejection ratio versus ambient temperature 0 10 20 30 40 50 60 70 80 -60 -40 -20 0 20 40 60 80 100 ambient temperature ta (c) am rejection ratio amr (db ) (am<30%, fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v) duty ratio of wave shaped output versus ambient temperature 40 42 44 46 48 50 52 54 56 58 60 -40 -20 0 20 40 60 80 100 ambient temperature ta (c) duty ratio of wave shaped outpu t dr (%) (vi=60dbuemf,fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v)
njm2590/97 ver.2004-08-25 - 1 6 - [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. quick charge/dischargecurrent versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 -40-20 0 20406080100 ambient temperature ta (c) quick charge/discharge current ich (ua) (v fskout =gnd, v lofout =0.18v,v+=1.8v) rssi output resistance versus ambient temperature 0 10 20 30 40 50 60 -40 -20 0 20 40 60 80 100 ambient temperature ta (c) rssi output resistance (k ? ) (vi=40dbuemf,fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v) rssi output voltage versus ambient temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -40-20 0 20406080100 ambient temperature ta (c) rssi output voltage vrssi (v) 1.6v 1.8v 3.0v 5.0v (vi=40dbuemf,fin=455khz, fmod=600hz, fdev=4khz,v+=1.8v)

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